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参数资料
| 型号： | IRHN57250SE |
| 英文描述： | 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package |
| 中文描述： | 200伏100kRad高可靠性单N通道看到一贴片MOSFET的硬化- 1封装 |
| 文件页数： | 3/8页 |
| 文件大小： | 124K |
| 代理商： | IRHN57250SE |
www.irf.com
3
IRHN57250SE
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Parameter
100K Rads (Si)
Min
200
2.0
—
—
—
Units
Test Conditions
Max
—
4.5
100
-100
10
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1)
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=160V, V
GS
=0V
nA
μA
—
0.06
V
GS
= 12V, I
D
= 19A
R
DS(on)
V
SD
Diode Forward Voltage
—
1.2
V
V
GS
= 0V, I
D
= 31A
— 0.06
V
GS
= 12V, I
D
= 19A
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 200 200 200 200 200
I
59.8
341 32.5 200 200 200 185 120
Au
82.3
350 28.4 200 200 150
LET
Energy Range
V
DS
(V)
50
25
0
50
100
150
200
250
0
-5
-10
-15
-20
VGS
V
Br
I
Au
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