- 您现在的位置：买卖IC网 > PDF目录377522 > IRHN8230 (International Rectifier) TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) PDF资料下载
参数资料
| 型号： | IRHN8230 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0） |
| 文件页数： | 2/14页 |
| 文件大小： | 513K |
| 代理商： | IRHN8230 |
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
1.67
Test Conditions
RthJC
K/W
RthJPCB
Junction-to-PC board
—
TBD
—
soldered to a copper-clad PC board
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
9.0
36
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
2.0
460
5.0
V
ns
μ
C
T
j
= 25°C, IS = 9A, VGS = 0V
Tj = 25°C, IF = 9A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
200
—
Typ. Max. Units
—
—
0.27
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
BVDSS
V
V/°C
—
—
2.0
3.0
—
—
—
—
—
—
—
—
0.40
0.49
4.0
—
25
250
VGS = 12V, ID = 6.0A
VGS = 12V, ID = 9.0A
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 6.0A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 9.0A
VDS = Max. Rating x 0.5
(see figures 23 and 31)
VDD = 100V, ID = 9.0A,
RG = 7.5
(see figure 28)
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
50
10
20
35
80
60
46
—
LS
Internal Source Inductance
—
4.1
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1100
250
65
—
—
—
VGS = 0V, VDS = 25V
f = 1.0 MHz
(see figure 22)
IRHN7230, IRHN8230 Devices
Pre-Radiation
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
Next Data Sheet
Index
Previous Datasheet
To Order
相关PDF资料 |
PDF描述 |
|---|---|
| IRHN7250 | HEXFET Transistor(HEXFET 晶体管) |
| IRHN8250 | HEXFET Transistor(HEXFET 晶体管) |
| IRHN9130 | P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P沟道,-100 V, 0.3Ω,抗辐射HEXFET晶体管) |
| IRHN93130 | P-Channel,-100 Volt, 0.3Ω, RAD HARD HEXFET(P沟道,-100 V, 0.3Ω,抗辐射HEXFET晶体管) |
| IRHN9230 | P-Channel RAD HARD HEXFET TRANSISTOR(P 沟道 Rad Hard 技术 HEXFET晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHN8250 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN8450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN8450SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN9130 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN9150 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 22A 3SMD-1 - Rail/Tube |
发布紧急采购，3分钟左右您将得到回复。