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参数资料
| 型号： | IRHN9230 |
| 厂商： | International Rectifier |
| 英文描述： | P-Channel RAD HARD HEXFET TRANSISTOR(P 沟道 Rad Hard 技术 HEXFET晶体管) |
| 中文描述： | P沟道晶体管RAD数据通信硬的HEXFET性（P沟道拉德硬盘技术的HEXFET晶体管） |
| 文件页数： | 1/4页 |
| 文件大小： | 42K |
| 代理商： | IRHN9230 |
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRHN9230
-200V
0.8
-6.5A
Features:
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Light-weight
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Provisional Data Sheet No. PD-9.1445
P-CHANNEL
RAD HARD
-200 Volt, 0.8
, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identica
l pre- and post-radiation
test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. In addition these devices are also
capable of surviving transient ionization pulses as high as
1 x 10
12
Rads (Si)/Sec, and return to normal operation within
a few microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can expect
the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
IRHN9230
Pre-Radiation
Notes: See page 4
o
C
A
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRHN9230
-6.5
-4.0
-26
75
0.6
±20
150
-6.5
7.5
-5.0
-55 to 150
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting
Surface Temperature
Weight
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5 seconds)
2.6 (typical)
g
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相关代理商/技术参数 |
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| IRHN9250 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN93130 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN93150 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN93230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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