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参数资料
| 型号： | IRHNA3160 |
| 厂商： | International Rectifier |
| 英文描述： | Surface Mount Power MOSFET(表贴型功率MOS场效应管) |
| 中文描述： | 表面贴装功率MOSFET（表贴型功率马鞍山场效应管） |
| 文件页数： | 1/8页 |
| 文件大小： | 107K |
| 代理商： | IRHNA3160 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
51
32.5
204
300
2.4
±20
500
51
30
7.3
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s)
3.3 (Typical)
g
PD - 91396C
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
5/4/2000
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA7160 100K Rads (Si)
IRHNA3160 300K Rads (Si)
IRHNA4160 600K Rads (Si)
IRHNA8160 1000K Rads (Si)
I
D
QPL Part Number
JANSR2N7432U
JANSF2N7432U
JANSG2N7432U
JANSH2N7432U
0.04
0.04
0.04
0.04
51A
51A
51A
51A
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
For footnotes refer to the last page
IRHNA7160
100V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
SMD - 2
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA4160 | Surface Mount Power MOSFET(表贴型功率MOS场效应管) |
| IRHNA53160 | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| IRHNA57160 | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| IRHNA58160 | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| IRHNA54160 | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA3260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA3Z60 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA3Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA3Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA4064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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