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参数资料
| 型号： | IRHNA3160 |
| 厂商： | International Rectifier |
| 英文描述： | Surface Mount Power MOSFET(表贴型功率MOS场效应管) |
| 中文描述： | 表面贴装功率MOSFET（表贴型功率马鞍山场效应管） |
| 文件页数： | 2/8页 |
| 文件大小： | 107K |
| 代理商： | IRHNA3160 |
2
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IRHNA7160
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.11
Max Units
—
—
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
16
—
—
—
—
—
—
—
—
0.040
0.045
4.0
—
25
250
VGS = 12V, ID = 32.5A
VGS = 12V, ID = 51A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 32.5A
VDS= 80V,VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 51A
VDS = 50V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
310
53
110
35
150
150
200
—
nC
VDD = 50V, ID = 51A,
RG = 2.35
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5300
1600
350
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJPCB
Junction-to-PC Board
Min Typ Max
—
—
—
1.6
Units
Test Conditions
0.42
—
Solder to a 1” sq. copper clad PC Board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
51
204
1.8
520
6.5
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS = 51A, VGS = 0V
Tj = 25°C, IF = 51A, di/dt
≥
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from center of drain
pad to center of source pad
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