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参数资料
| 型号： | IRHNA3160 |
| 厂商： | International Rectifier |
| 英文描述： | Surface Mount Power MOSFET(表贴型功率MOS场效应管) |
| 中文描述： | 表面贴装功率MOSFET（表贴型功率马鞍山场效应管） |
| 文件页数： | 3/8页 |
| 文件大小： | 107K |
| 代理商： | IRHNA3160 |
www.irf.com
3
Radiation Characteristics
IRHNA7160
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 50 μA
R
DS(on)
Static Drain-to-Source
— 0.045 — 0.062
V
GS
= 12V, I
D
=32.5A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.04 — 0.057
V
GS
= 12V, I
D
=32.5A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
— 1.8 — 1.8 V
100K Rads(Si)
1
600 to 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHNA7160 (JANSR2N7432U)
2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 51A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V @
V
GS
=-20V
Cu
28
285 43 100 100 100 80 60
Br
36.8
305 39 100 90 70 50 —
LET
Energy Range
V
DS(V)
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
V
Cu
Br
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| IRHNA4160 | Surface Mount Power MOSFET(表贴型功率MOS场效应管) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA3260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA3Z60 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA3Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA3Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA4064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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