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参数资料
| 型号： | IRHN9230 |
| 厂商： | International Rectifier |
| 英文描述： | P-Channel RAD HARD HEXFET TRANSISTOR(P 沟道 Rad Hard 技术 HEXFET晶体管) |
| 中文描述： | P沟道晶体管RAD数据通信硬的HEXFET性（P沟道拉德硬盘技术的HEXFET晶体管） |
| 文件页数： | 3/4页 |
| 文件大小： | 42K |
| 代理商： | IRHN9230 |
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test method
1019. International Rectifier has imposed a standard
gate voltage of -12 volts per note 6 and a VDSS bias
condition equal to 80% of the device rated voltage per
note 7. Pre- and post-radiation limits of the devices
irradiated to 1 x 10
5
Rads (Si) are identical and are
presented in Table 1. The values in Table 1 will be met
for either of the two low dose rate test circuits that are
used.
Radiation Performance of P-Channel Rad
Hard HEXFETs
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier P-Channel radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects environment the results are shown in Table 3.
IRHN9230 Device
Radiation Characteristics
V
nA
Table 1. Low Dose Rate
IRHN9230
100K Rads (Si)
min.
-200
-2.0
—
—
—
—
Parameter
Units
Test Conditions
max.
—
-4.0
-100
100
-25
0.8
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
GS
= 0V, I
D
= -1.0 mA
V
GS
= V
DS
, I
D
= -1.0 mA
V
GS
= -20V
V
GS
= 20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= -12V, I
D
= -4.0A
μA
V
SD
—
-5.0
V
T
C
= 25°C, I
S
= -6.5A,V
GS
= 0V
Table 2. High Dose Rate
10
11
Rads (Si)/sec10
12
Rads (Si)/sec
Min. Typ Max. Min.Typ. Max. Units
—
—
-160
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
-160
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
27
-60
-800
—
—
—
—
—
—
0.5
-60
-160
—
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
-200
V
GS
Bias
(V)
+5
Parameter
Typ.
Units
Ion
BVDSS
-200
V
Ni
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