参数资料
型号: IRHN8450
厂商: International Rectifier
英文描述: HEXFET Transistor(HEXFET 晶体管)
中文描述: 的HEXFET晶体管(之HEXFET晶体管)
文件页数: 7/12页
文件大小: 310K
代理商: IRHN8450
IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices
www.irf.com
7
Fig 16.
Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 17.
Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
Fig 14.
Typical Output Characteristics
Pre-Irradiation
Fig 15.
Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Note: Bias Conditions during radiation: V
GS
= 0 Vdc, V
DS
= 400 Vdc
Radiation
Characteristics
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