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参数资料
| 型号： | IRHN9250 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶体管) |
| 中文描述： | 的HEXFET晶体管（之HEXFET晶体管） |
| 文件页数： | 3/8页 |
| 文件大小： | 122K |
| 代理商： | IRHN9250 |
www.irf.com
3
IRHN9250, IRHN93250 Devices
Radiation Characteristic
Table 1. Low Dose Rate
Parameter
IRHN9250
100K Rads (Si) 300K Rads (Si)
Units
Min
Max
Min
-200
—
-200
-2.0
-4.0
-2.0
—-
-100
—
—
100
—
—
-25
—
—
0.315
—
IRHN93250
Test Conditions
Max
—
-5.0
-100
100
-25
0.315
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
= -9A
nA
μA
W
V
SD
—
-1.9
—
-1.9
V
TC = 25°C, IS = -14A,V
GS
= 0V
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
-160
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
-160
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
-160 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
27
-100
—
—
—
-800
—
—
—
0.5
100
—
—
—
A
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Ni 28
1x 10
5
~41 -200
5
Table 3. Single Event Effects
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier com
prises three radiation environments.
Every manufacturing lot is tested in a low dose rate (to-
tal dose) environment per MIL-STD-750, test method
1019 condition A. International Rectifier has imposed a
standard gate condition of -12 volts per note 5 and a
V
bias condition equal to 80% of the device rated
voltage per note 6. Pre- and post- irradiation limits of
the devices irradiated to 1 x 10
5
Rads (Si) are identical
and are presented in Table1,column1, IRHN9250.Post-
irradiation limits of the devices irradiated to 3 x 10
5
Rads(Si) are presented in Table1,column2, IRHN93250.
The values in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 3 x 10
5
Rads (Si) the
only parametric limit change is V
GS(th)
maximum.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2). International Rectifier radia-
tion hardened P-Channel HEXFETs are considered
to be neutron-tolerant, as stated in MIL-PRF-19500
Group D.
International Rectifier radiation hardened P-Channel
HEXFETs have been characterized in heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
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