- 您现在的位置：买卖IC网 > PDF目录377522 > IRHNA597064 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PDF资料下载
参数资料
| 型号： | IRHNA597064 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 2） |
| 文件页数： | 4/8页 |
| 文件大小： | 226K |
| 代理商： | IRHNA597064 |
IRHNA597064
Pre-Irradiation
4
www.irf.com
Normalized On-Resistance
Vs. Temperature
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
5
5.5
6
6.5
7
7.5
8
-VGS, Gate-to-Source Voltage (V)
100
1000
-D
)
VDS = -25V
20
μ
s PULSE WIDTH
TJ = 150°C
TJ = 25°C
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
10
100
1000
-D
20
μ
s PULSE WIDTH
Tj = 25°C
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
VGS
-5.0V
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
10
100
1000
-D
20
μ
s PULSE WIDTH
Tj = 150°C
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
VGS
-5.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
-12V
-56A
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA593260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA597260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA63160 | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| IRHNA67160 | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| IRHNA7Z60 | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA597064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA597064SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA597160 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 47A 3SMD-2 - Rail/Tube |
| IRHNA597260 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA597260SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
发布紧急采购，3分钟左右您将得到回复。