参数资料
型号: IRHNA597064
厂商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
中文描述: 抗辐射功率MOSFET表面贴装系统(SMD - 2)
文件页数: 7/8页
文件大小: 226K
代理商: IRHNA597064
www.irf.com
7
Pre-Irradiation
IRHNA597064
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
tp
V
(BR)DSS
I
AS
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
400
800
1200
1600
EA
ID
TOP -25A
-35.4A
BOTTOM -56A
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