参数资料
型号: IRHNA597260
厂商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
中文描述: 抗辐射功率MOSFET表面贴装系统(SMD - 2)
文件页数: 4/8页
文件大小: 119K
代理商: IRHNA597260
IRHNA597260
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10
100
1000
5.0
5.5
6.0
6.5
7.0
VDS
20μs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
-
D
T = 25 C
°
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
-12V
-35.5A
10
100
1000
1
10
100
20μs PULSE WIDTH
T = 150 C
°
TOP
BOTTOM
VGS
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
10
100
1000
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
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