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参数资料
| 型号： | IRHNA7260 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL |
| 中文描述： | 晶体管N沟道 |
| 文件页数： | 3/4页 |
| 文件大小： | 161K |
| 代理商： | IRHNA7260 |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
160
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
160
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
8.0 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
21
—
—
—
160
—
—
—
20
21
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
160
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
200
V
Ni
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
VDSS bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 1 x 10
5
Rads (Si) are identi-
cal and are presented in Table 1, column 1,
IRHNA7260. The values in Table 1 will be met for
Radiation Performance of Rad Hard HEXFETs
IRHNA7260, IRHNA8260 Devices
Radiation Characteristics
either of the two low dose rate test circuits that are
used. Both pre- and post-radiation performance are
tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison. It should be noted that at a radiation level of
1 x 10
5
Rads (Si), no change in limits are specified in
DC parameters.
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
IRHNA7260 IRHNA8260
100K Rads (Si) 1000K Rads (Si)
Units
min.
max.
min.
200
—
200
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.070
—
Test Conditions
max.
—
4.5
100
-100
50
0.110
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= 12V, I
D
= 27A
nA
μ
A
V
SD
—
1.8
—
1.8
V
TC = 25°C, IS = 43A,V
GS
= 0V
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