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参数资料
| 型号： | IRHNA7264SE |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 250V，的Rds（on）\u003d 0.110ohm，身份证\u003d 34A条） |
| 文件页数： | 3/4页 |
| 文件大小： | 127K |
| 代理商： | IRHNA7264SE |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
200
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
200
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/
μ
sec Rate of rise of photo-current
μ
H
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
—
10
16
1
—
—
—
—
—
—
10
2.3
20
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~35
V
DS
Bias
(V)
200
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
250
V
Ni
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier uses
two radiation environments.
IRHNA7264SE Device
Radiation Characteristics
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a stan-
dard gate voltage of 12 volts per note 6 and a V
DSS
bias condition equal to 80% of the device rated volt-
age per note 7. Pre- and post-radiation limits of the de-
vices irradiated to 1 x 10
5
Rads (Si) are identical and
are presented in Table 1. The values in Table 1 will be
met for either of the two low dose rate test circuits
that are used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads
(Si), no change in limits are specified in DC param-
eters.
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 10
12
Rads (Si)/
Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single Event
Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
IRHNA7264SE
100K Rads (Si)
min.
max.
250
2.0
—
—
—
—
Units
Test Conditions
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
—
4.5
100
-100
50
0.110
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= 12V, I
D
=21A
nA
μ
A
V
SD
—
1.4
V
TC = 25
o
C, IS = 34A,V
GS
= 0V
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