参数资料
型号: IRHNA7360SE
厂商: International Rectifier
英文描述: TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
中文描述: 晶体管N沟道(BVdss \u003d为400V,的RDS(on)\u003d 0.20ohm,身份证\u003d 24.3A)
文件页数: 4/4页
文件大小: 137K
代理商: IRHNA7360SE
IRHNA7360SE Device
Radiation Characteristics
Case Outline and Dimensions - SMD2
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = 24.3A, VGS = 12V, 25
RG
200
ISD
24.3A, di/dt
170 A/
μ
s,
VDD
BVDSS, TJ
150°C
Suggested RG = 2.35
Pulse width
300
μ
s; Duty Cycle
2%
K/W = °C/W
W/K = W/°C
2
) * [BVDSS/(BVDSS-VDD)]
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
LEAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982
2. CONTROLLING DIMENSION: INCH
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
4 DIMENSION INCLUDES METALLIZATION FLASH
5 DIMENSION DOES NOT INCLUDE METALLIZATION FLASH
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject o change without notice.
To Order
10/96
Next Data Sheet
Index
Previous Datasheet
相关PDF资料
PDF描述
IRHNA7460SE TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
IRHNA8064 TRANSISTOR N-CHANNEL
IRHNA9064 TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48A)
IRHNA9160 TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A)
IRHNB3160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
相关代理商/技术参数
参数描述
IRHNA7360SESCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNA7360SESCV 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNA7460SE 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHNA7460SESCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNA7460SESCV 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk