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参数资料
| 型号： | IRHNA9064 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48A) |
| 中文描述： | 晶体管P沟道（BVdss \u003d- 60V的，的Rds（on）\u003d 0.055ohm，身份证\u003d- 48A条） |
| 文件页数： | 2/4页 |
| 文件大小： | 123K |
| 代理商： | IRHNA9064 |
IRHNA9064
Pre-Radiation
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
-48
-192
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
480
3.7
V
ns
μ
C
T
j
= 25°C, IS = -48A, VGS = 0V
Tj = 25°C, IF = -48A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-60
—
Typ
—
-0.048
Max Units
—
—
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
16
—
—
—
—
—
—
—
—
0.055
0.065
-4.0
—
-25
-250
VGS = -12V, ID = -30A
VGS = -12V, ID = -48A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -30A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS =-20 V
VGS = 20V
VGS = -12V, ID = -48A
VDS = Max Rating x 0.5
VGS(th)
gfs
IDSS
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
260
60
86
62
227
200
115
—
nC
VDD = -30V, ID = -48A,
RG = 2.35
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7400
3200
540
—
—
—
VGS = 0V, VDS = -25 V
f = 1.0MHz
pF
nA
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
μ
A
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
TBD
Units
Test Conditions
0.42
—
K/W
Soldered to a copper-clad PC board
* Limited by Pin diameter
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