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参数资料
| 型号： | IRHNB4160 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 3） |
| 文件页数： | 3/8页 |
| 文件大小： | 101K |
| 代理商： | IRHNB4160 |
www.irf.com
3
Pre-Irradiation
IRHNB7160
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 50 μA
R
DS(on)
Static Drain-to-Source
"
— 0.040 — 0.057
V
GS
= 12V, I
D
=32.5A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
"
— 0.040 — 0.057
V
GS
= 12V, I
D
=32.5A
On-State Resistance (SMD-3)
V
SD
Diode Forward Voltage
"
— 1.8 — 1.8 V
100 K Rads(Si)
1
300 - 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHNB7160
2. Part numbers IRHNB3160, IRHNB4160 and IRHNB8160
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 51A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
V
Cu
Br
n
o
T
E
m
L
)
2
m
c
(
V
e
M
y
)
g
e
n
e
M
(
E
V
e
)
g
n
m
a
R
μ
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
=
S
G
V
@
V
0
1
=
S
G
V
@
V
5
1
=
S
G
V
@
V
0
2
=
S
G
V
@
u
C
8
2
5
8
2
3
4
0
0
1
0
0
1
0
0
1
0
8
0
6
r
B
8
3
5
0
3
9
3
0
0
1
0
9
0
7
0
5
—
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|---|---|
| IRHNJ3130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNB4260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB4Z60 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) |
| IRHNB7064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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