- 您现在的位置：买卖IC网 > PDF目录384503 > IRHNB4160 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) PDF资料下载
参数资料
| 型号： | IRHNB4160 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 3） |
| 文件页数： | 8/8页 |
| 文件大小： | 101K |
| 代理商： | IRHNB4160 |
8
www.irf.com
IRHNB7160
Pre-Irradiation
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L=0.38mH
Peak IL = 51A, VGS =12V
ISD
≤
51A, di/dt
≤
410A/
μ
s,
VDD
≤
100V, TJ
≤
150
°
C
Foot Notes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/01
Case Outline and Dimensions
—
SMD-3
PAD ASSIGNMENTS
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNJ3130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ4130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ8130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ7130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNB4260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB4Z60 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) |
| IRHNB7064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
发布紧急采购，3分钟左右您将得到回复。