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参数资料
| 型号： | IRHQ57214SE |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.9A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的|阵| N沟道| 250V五（巴西）直| 1.9AI（四）| LLCC |
| 文件页数： | 2/8页 |
| 文件大小： | 128K |
| 代理商： | IRHQ57214SE |
IRHQ597110
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min Typ
—
—
—
—
—
Max Units
-2.8
-11.2
-5.0
138
555
Test Conditions
—
—
—
—
—
V
nS
nC
T
j
= 25°C, IS = -2.8A, VGS = 0V
Tj = 25°C, IF = -2.8A, di/dt
≤
100A/
μ
s
VDD
≤
-50V
A
Electrical Characteristics
@ Tj = 25°C
(Unless Otherwise Specified)
( Per Die)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.13
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
-2.0
1.9
—
—
—
—
—
—
—
—
1.2
0.96
-4.0
—
-10
-25
VGS = -12V, ID = -2.8A
VGS = -12V, ID = -1.8A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -1.8A
VDS= -80V, VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -2.8A
VDS = -50V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
11
3.0
4.2
20
24
32
90
—
nC
VDD = -50V, ID = -2.8A,
VGS = -12V, RG = 7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
377
102
7.0
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Measured from the center of
drain pad to center of source pad
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
11.8
60
Typical socket mount
°C/W
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