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参数资料
| 型号： | IRHQ57214SE |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.9A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的|阵| N沟道| 250V五（巴西）直| 1.9AI（四）| LLCC |
| 文件页数： | 5/8页 |
| 文件大小： | 128K |
| 代理商： | IRHQ57214SE |
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5
Pre-Irradiation
IRHQ597110
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1.0
2.0
3.0
4.0
5.0
6.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 150 C
T = 25 C
°
1
10
100
0
100
200
300
400
500
600
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-2.8A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
-D
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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