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| 型号： | IRL2203NS.IRL2203NL |
| 英文描述： | (161.16 k) |
| 中文描述： | （161.16十一） |
| 文件页数： | 2/10页 |
| 文件大小： | 161K |
| 代理商： | IRL2203NS.IRL2203NL |
IRL2203NS/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
30
–––
–––
0.035 –––
–––
––– 0.007
–––
–––
1.0
–––
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
–––
210
–––
29
–––
54
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 60A
V
GS
= 4.5V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 60A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 60A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 60A
R
G
= 1.8
,
V
GS
= 4.5V
R
D
= 0.25
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
–––
V
V/°C
0.01
–––
–––
25
250
100
-100
110
31
57
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3500 –––
1400 –––
690
pF
–––
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
7.5
nH
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 60A, V
GS
= 0V
T
J
= 25°C, I
F
= 60A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
94
280
1.3
140
410
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
S
D
G
116
400
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 15V, starting T
J
= 25°C, L = 220μH
R
G
= 25
, I
AS
= 60A. (See Figure 12)
I
SD
≤
60A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
Uses IRL2203N data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
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