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参数资料
| 型号： | IRL2910N |
| 文件页数： | 1/8页 |
| 文件大小： | 146K |
| 代理商： | IRL2910N |
IRL2910
PRELIMINARY
HEXFET
Power MOSFET
PD 9.1375
Parameter
Typ.
–––
0.50
–––
Max.
1.0
–––
62
Units
°C/W
°C/W
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Thermal Resistance
V
DSS
= 100V
R
DS(on)
= 0.026
I
D
= 48A
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Parameter
Max.
48
34
190
150
1.0
± 20
520
29
15
7.4
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs fromInternational Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design for which HEXFET
Power MOSFETs are well known, provides the designer with an
extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately
50 watts. The low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance throughout the industry.
Description
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PDF描述 |
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| IRL3402S | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 85A I(D) | TO-263AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRL2910PBF | 功能描述:MOSFET MOSFT 48A 93.3nC 260mOhm LogLvAB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL2910S | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET POWER MOSFET |
| IRL2910SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 55A 3PIN D2PAK - Rail/Tube |
| IRL2910SPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL2910SPBF | 制造商:International Rectifier 功能描述:MOSFET |
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