参数资料
型号: IRL2310
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-220AB
中文描述: 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 40A条(丁)| TO - 220AB现有
文件页数: 1/4页
文件大小: 81K
代理商: IRL2310
IRL2310
HEXFET
Power MOSFET
PD - 9.1275
Revision 1
V
DSS
= 100V
R
DS(on)
= 0.040
I
D
= 40A
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
= 4.5V & 10V
175°C Operating Temperature
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design for which HEXFET Power MOSFETs are well
known, provides the designer with an extremely efficient device for use in a
wide variety of application.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
Thermal Resistance
Parameter
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
0.90
––––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Absolute Maximum Ratings
Parameter
Max.
40
29
160
170
1.1
±20
500
24
17
5.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
PRELIMINARY
相关PDF资料
PDF描述
IRL2910N
IRL3202S 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRL3202S N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
IRL3303L TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-262AA
IRL3402S TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 85A I(D) | TO-263AA
相关代理商/技术参数
参数描述
IRL2505 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB
IRL2505 制造商:International Rectifier 功能描述:MOSFET N TO-220AB
IRL2505L 功能描述:MOSFET N-CH 55V 104A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRL2505LPBF 制造商:International Rectifier 功能描述:104 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
IRL2505PBF 功能描述:MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube