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| 型号： | IRL2203NSTRR |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 116A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 116A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 60A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3290pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRL2203NS/L
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
R DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
–––
0.029
–––
–––
–––
7.0
10
V/°C Reference to 25°C, I D = 1mA
V GS = 10V, I D = 60A
V GS = 4.5V, I D = 48A
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
1.0
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
–––
25
250
100
-100
60
14
V
S
μA
nA
nC
V DS = V GS , I D = 250μA
V DS = 25V, I D = 60A
V DS = 30V, V GS = 0V
V DS = 24V, V GS = 0V, T J = 125°C
V GS = 16V
V GS = -16V
I D = 60A
V DS = 24V
Q gd
R G
t d(on)
t r
t d(off)
t f
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
0.2
–––
–––
–––
–––
–––
–––
11
160
23
66
33
3.0
–––
–––
–––
–––
?
V GS = 4.5V, See Fig. 6 and 13
V DD = 15V
I D = 60A
R G = 1.8 ?
V GS = 4.5V, See Fig. 10
L D
L S
C iss
C oss
C rss
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
4.5
7.5
3290
1270
170
–––
–––
–––
–––
–––
Nh
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
V GS = 0V
V DS = 25V
? = 1.0MHz, See Fig. 5
E AS
Single Pulse Avalanche Energy
––– 1320
290
mJ
I AS = 60A, L = 0.16mH
Source-Drain Ratings and Characteristics
I S
Symbol
Parameter
Continuous Source Current
Min
–––
Typ
–––
Max Units
116
Conditions
MOSFET symbol
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
400
integral reverse
(Body Diode)
p-n junction diode.
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
56
110
1.2
84
170
V
ns
nC
T J = 25°C, I S = 60A, V GS = 0V
T J = 25°C, I F = 60A
di/dt = 100A/μs
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 0.16mH R G = 25 ? ,
I AS = 60A, V GS =10V (See Figure 12)
? I SD ≤ 60A , di/d t ≤ 110A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
? This is a typical value at device destruction and represents
operation outside rated limits.
? This is a calculated value limited to T J = 175°C .
? Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
? When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
? R θ is measured at T J approximately 90°C
www.irf.com
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| IRL2203NSTRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 116A 3-Pin(2+Tab) D2PAK T/R |
| IRL2203NSTRRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL2203S | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A) |
| IRL2203STRL | 功能描述:MOSFET N-CH 30V 100A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRL2203STRR | 功能描述:MOSFET N-CH 30V 100A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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