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| 型号： | IRL3502STRR |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 110A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 64A，7V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 110nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4700pF @ 15V |
| 功率 - 最大： | 140W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
PD -9.1676A
PRELIMINARY
IRL3502S
HEXFET ? Power MOSFET
l
l
l
l
l
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
G
D
V DSS = 20V
R DS(on) = 0.007 W
D P ak
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D 2 Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
S
2
I D = 110A ?
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 4.5V ?
110 ?
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
V GSM
Continuous Drain Current, V GS @ 4.5V ?
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
67
420
140
1.1
± 10
14
A
W
W/°C
V
V
(Start Up Transient, tp = 100μs)
E AS
I AR
E AR
dv/dt
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
390
64
14
5.0
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 150
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R q JC
Junction-to-Case
–––
0.89
R q JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
°C/W
11/18/97
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRL3502STRRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 110A 3PIN D2PAK - Tape and Reel |
| IRL3502STRRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL3705 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-220AB |
| IRL3705N | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET N LOGIC TO-220 |
| IRL3705N/L | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
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