参数资料
型号: IRL3502STRR
厂商: International Rectifier
文件页数: 2/9页
文件大小: 0K
描述: MOSFET N-CH 20V 110A D2PAK
标准包装: 800
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 110A
开态Rds(最大)@ Id, Vgs @ 25° C: 7 毫欧 @ 64A,7V
Id 时的 Vgs(th)(最大): 700mV @ 250µA
闸电荷(Qg) @ Vgs: 110nC @ 4.5V
输入电容 (Ciss) @ Vds: 4700pF @ 15V
功率 - 最大: 140W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
IRL3502S
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
––– V V GS = 0V, I D = 250μA
D V (BR)DSS / D T J Breakdown Voltage Temp. Coefficient
–––
0.019
–––
V/°C Reference to 25°C, I D = 1.0mA ?
V GS = 7.0V, I D = 64A ?
0.007
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
0.70
77
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
140
96
130
0.008 V GS = 4.5V, I D = 64A ?
W
––– V V DS = V GS , I D = 250μA
––– S V DS = 10V, I D = 64A ?
25 V DS = 20V, V GS = 0V
μA
250 V DS = 10V, V GS = 0V, T J = 150°C
100 V GS = 10V
nA
-100 V GS = -10V
110 I D = 64A
27 nC V DS = 16V
39 V GS = 4.5V, See Fig. 6 ??
––– V DD = 10V
––– I D = 64A
ns
––– R G = 3.8 W, V GS = 4.5V
––– R D = 0.15 W, ??
L S
Internal Source Inductance
–––
7.5 –––
nH
Between lead,
and center of die contact
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4700 ––– V GS = 0V
1900 ––– pF V DS = 15V
640 ––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
––– ––– 110 ?
––– ––– 420
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3 V T J = 25°C, I S = 64A, V GS = 0V ?
––– 87 130 ns T J = 25°C, I F = 64A
––– 200 310 nC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature.
? Starting T J = 25°C, L = 190μH
R G = 25 W , I AS = 64A.
? I SD £ 64A, di/dt £ 86A/μs, V DD £ V (BR)DSS ,
T J £ 150°C
? Pulse width £ 300μs; duty cycle £ 2%.
? Uses IRL3502 data and test conditions
? Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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