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参数资料
型号： IRL6903L
英文描述： TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 105A I(D) | TO-262AA
中文描述： 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 105A及一（d）|对262AA
文件页数： 2/8页
文件大小： 136K
代理商： IRL6903L
IRL6903
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -55A, V
GS
= 0V
T
J
= 25°C, I
F
= -55A
di/dt = -100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
82
170
-1.3
120
260
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 0.66mH
R
G
= 25
, I
AS
= -55A. (See Figure 12)
I
SD
≤
-55A, di/dt
≤
-130A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-105
-360
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
Min. Typ. Max. Units
-30
–––
–––
-0.028 –––
–––
––– 0.011
–––
–––
-1.0
–––
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
–––
130
–––
88
–––
150
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -55A
V
GS
= -4.5V, I
D
= -46A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -25V, I
D
= -65A
V
DS
= -30V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 150°C
V
GS
= -16V
V
GS
= 16V
I
D
= -55A
V
DS
= -24V
V
GS
= -4.5V, See Fig. 6 and 13
V
DD
= -15V
I
D
= -55A
R
G
= 2.5
,
V
GS
= -4.5V
R
D
= 0.26
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
–––
V
V/°C
0.02
–––
–––
-25
-250
100
-100
100
44
55
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4400 –––
2000 –––
590
pF
–––
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