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参数资料
| 型号： | IRL7N1404 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET SURFACE MOUNT (SMD-1) |
| 中文描述： | HEXFET功率MOSFET的表面贴装系统（SMD - 1） |
| 文件页数： | 2/7页 |
| 文件大小： | 115K |
| 代理商： | IRL7N1404 |
IRL7N1404
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
40
—
Typ
—
0.041
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
1.0
93
—
—
—
—
—
—
—
—
0.006
0.008
3.0
—
20
250
VGS = 10V, ID = 55A
VGS = 4.5V, ID = 55A
VDS = VGS, ID = 250
μ
A
VDS =10V, IDS = 55A
VDS = 40V ,VGS=0V
VDS = 32V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =5.0V, ID = 55A
VDS = 32V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
200
-200
115
37
45
40
356
63
96
—
nC
VDD = 20V, ID = 55A,
VGS = 5.0V, RG = 2.5
Measured from the center of drain
pad to the center of source pad
l
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6470
1600
165
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.25
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
55*
220
1.3
125
230
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 55A, VGS = 0V
Tj = 25°C, IF = 55A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package
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