参数资料
型号: IRLF120
厂商: International Rectifier
英文描述: HEXFET TRANSISTORS THRU-HOLE (TO-39)
中文描述: 的HEXFET三极管通孔(到39)
文件页数: 1/7页
文件大小: 548K
代理商: IRLF120
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 5.0V, TC = 25°C
ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
5.3
3.4
21
20
0.16
±10
120
5.3
2.0
5.5
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
The Logic Level ‘L’ series of power MOSFETs are de-
signed to be operated with level logic gate-to-source
voltage of 5V. In addition to the well established
characterstics of HEXFETs
,
they have the added ad-
vantage of providing low drive requirements to inter-
face power loads to logic level IC’s and microprocessors.
Fields of applications include: high speed power appli-
cations such as switching regulators, switching con-
verters, motor drivers, solenoid and relay drivers and
drivers for high power bipolar switching transistors re-
quiring high speed and low gatedrive voltage.
The HEXFET technology is the key to International
Rectifier’s advanced line of logic level power MOSFET
transistors. The efficient geometry and unique process-
ing of the HEXFET achieve very low on-state resistance
combined with high transconductance and great de-
vice ruggedness.
.
o
C
A
08/08/01
www.irf.com
1
TO-39
Product Summary
Part Number BVDSS R
DS(on)
IRLF120 100V 0.35
5.3A
I
D
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Low Drive Requirements
Execellent Temperature Stability
Fast Switching Speeds
Ease of Paralleling
Hermetically Sealed
Light Weight
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-39)
IRLF120
TRANSISTORS
100V, N-CHANNEL
PD - 90639A
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