- 您现在的位置：买卖IC网 > PDF目录377534 > IRLF120 (International Rectifier) HEXFET TRANSISTORS THRU-HOLE (TO-39) PDF资料下载
参数资料
| 型号： | IRLF120 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTORS THRU-HOLE (TO-39) |
| 中文描述： | 的HEXFET三极管通孔（到39） |
| 文件页数： | 2/7页 |
| 文件大小： | 548K |
| 代理商： | IRLF120 |
IRLF120
2
www.irf.com
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
— 175 Typical socket mount.
Units
Test Conditions
RthJC
RthJA
6.25
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
5.3
21
2.5
220
1.1
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS = 5.3A, VGS = 0V
Tj = 25°C, IF = 5.3A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.13
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 250
μ
A
BVDSS
V
V/°C
—
—
1.0
3.1
—
—
—
— 0.42
VGS = 4.0V, ID = 2.7A
—
2.0 V VDS = VGS, ID = 250
μ
A
—
—
S (
)
VDS = 50V, IDS = 3.2A
—
250 VDS= 100V, VGS=0V
—
1000
μA
0.35 VGS = 5.0V, ID = 3.2A
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 10V
VGS = -10V
VGS =5.0V, ID = 5.3A
VDS= 80V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
13
2.4
7.1
13 VDD = 50V, ID = 5.3A,
53
VGS =5.0V, RG = 18
30
27
—
nH
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
nA
nC
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
480
150
30
VGS = 0V, VDS = 25V
f = 1.0MHz
—
—
pF
ns
相关PDF资料 |
PDF描述 |
|---|---|
| IRLI2203NPBF | HEXFET Power MOSFET |
| IRLI3615PBF | HEXFET Power MOSFET |
| IRLI3705NPBF | HEXFET㈢Power MOSFET |
| IRLI3803PBF | HEXFET Power MOSFET |
| IRLI520NPBF | HEXFET Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLF120SCX | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 5.3A 3-Pin TO-39 制造商:International Rectifier 功能描述:IRLF120SCX - Rail/Tube |
| IRLF130 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
| IRLF230 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET TRANSISTOR |
| IRLF4310TR | 制造商:International Rectifier 功能描述: |
| IRLG4 310X220X0.25 | 制造商:TDK 功能描述:IRLG4 310X220X0.25 \\Flexield (Magnetic Sheet) WO adhesive tape 制造商:TDK 功能描述:IRLG4 310X220X0.25 \Flexield (Magnetic Sheet) WO adhesive tape |
发布紧急采购，3分钟左右您将得到回复。