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参数资料
| 型号： | IRLI630G |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 6.2A） |
| 文件页数： | 2/8页 |
| 文件大小： | 337K |
| 代理商： | IRLI630G |
IRLI630G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 6.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.0A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
230
1.7
2.0
350
2.6
V
ns
μC
V
DD
= 25V, starting T
J
= 25°C, L = 2.4mH
R
G
= 25
, I
AS
= 6.2A. (See Figure 12)
I
SD
≤
9.0A, di/dt
≤
120A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200
–––
–––
0.27
–––
–––
–––
–––
1.0
–––
4.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
–––
57
–––
38
–––
33
Conditions
V
GS
= 0V, ID = 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 5.0V, I
D
= 3.7A
V
GS
= 4.0V, I
D
= 3.1A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 5.4A
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
V
GS
= 10V
V
GS
= -10V
I
D
= 9.0A
V
DS
= 160V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 100V
I
D
= 9.0A
R
G
= 6.0
R
D
= 11
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
0.40
0.50
2.0
–––
25
250
100
-100
40
5.5
24
–––
–––
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1100
220
70
–––
–––
–––
pF
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
–––
25
–––
–––
6.2
A
ns
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
D
Internal Drain Inductance
–––
4.5
–––
L
S
Internal Source Inductance
–––
7.5
–––
nH
nA
μA
R
DS(ON)
Static Drain-to-Source On-Resistance
t=60s, =60Hz
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