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| 型号： | IRLIB4343PBF |
| 厂商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO MOSFET |
| 中文描述： | 数字音频MOSFET的 |
| 文件页数： | 1/7页 |
| 文件大小： | 215K |
| 代理商： | IRLIB4343PBF |
www.irf.com
1
8/24/04
Notes
through are on page 7
IRLIB4343PbF
Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low R
DSON
for Improved Efficiency
Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
Low Q
rr
for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Lead-Free
Description
This Digital Audio HEXFET
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
V
DS
R
DS(ON)
typ. @ V
GS
= 10V
R
DS(ON)
typ. @ V
GS
= 4.5V
Q
g
typ.
T
J
max
55
42
57
28
175
V
m
m
nC
°C
Key Parameters
TO-220 Full-Pak
S
D
G
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting torque, 6-32 or M3 screw
A
W
W/°C
°C
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
3.84
65
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Max.
55
13
80
39
20
0.26
±20
19
10lb in (1.1N m)
-40 to + 175
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相关代理商/技术参数 |
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|---|---|
| IRLIB9343 | 功能描述:MOSFET P-CH 55V 14A TO220FP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLIB9343PBF | 功能描述:MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLIZ14A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-262AA |
| IRLIZ14G | 功能描述:MOSFET N-Chan 60V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLIZ14G_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
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