- 您现在的位置：买卖IC网 > PDF目录384507 > IRLIB4343PBF (International Rectifier) DIGITAL AUDIO MOSFET PDF资料下载
参数资料
| 型号： | IRLIB4343PBF |
| 厂商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO MOSFET |
| 中文描述： | 数字音频MOSFET的 |
| 文件页数： | 7/7页 |
| 文件大小： | 215K |
| 代理商： | IRLIB4343PBF |
www.irf.com
7
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
08/04
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.5mH, R
G
= 25
, I
AS
= 13A.
Pulse width
≤
400μs; duty cycle
≤
2%.
R
θ
is measured at
T
J
of approximately 90°C.
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information.
TO-220 Full-Pak Part Marking Information
WITH AS S E MBLY
LOT C ODE 3432
AS S E MBLE D ON WW 24 1999
IN THE AS S E MBLY LINE "K"
E XAMPLE :
THIS IS AN IRF I840G
PART NUMBE R
LOT C ODE
AS S E MBLY
INTE RNATIONAL
RE C TIF IE R
LOGO
34 32
924K
IRFI840G
DATE C ODE
YEAR 9 = 1999
WE E K 24
LINE K
Note:
"P" in assembly line
position indicates "Lead-Free"
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
相关PDF资料 |
PDF描述 |
|---|---|
| IRLIB9343 | DIGITAL AUDIO MOSFET |
| IRLIZ14G | POWER MOSFET |
| IRLIZ24N | HEXFET Power MOSFET |
| IRLIZ34G | POWER MOSFET |
| IRLIZ34N | Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLIB9343 | 功能描述:MOSFET P-CH 55V 14A TO220FP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLIB9343PBF | 功能描述:MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLIZ14A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-262AA |
| IRLIZ14G | 功能描述:MOSFET N-Chan 60V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLIZ14G_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
发布紧急采购，3分钟左右您将得到回复。