参数资料
型号: IRLIZ24N
厂商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件页数: 8/8页
文件大小: 281K
代理商: IRLIZ24N
IRLIZ24N
Package Outline — TO-220 Fullpak
Dimensions are shown in millimeters (inches)
Part Marking
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
NOTES:
1 DIMENSIONING & TOLERANCING
2 CONTROLLING DIMENSION: INCH.
D
C
A
B
MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)
3X
2.85 (.112)
2.65 (.104)
2.80 (.110)
2.60 (.102)
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
3.40 (.133)
3.10 (.123)
- A -
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
- B -
0.90 (.035)
0.70 (.028)
3X
0.25 (.010)
M
A M B
2.54 (.100)
2X
3X
13.70 (.540)
13.50 (.530)
16.00 (.630)
15.80 (.622)
1 2 3
10.60 (.417)
10.40 (.409)
1.40 (.055)
1.05 (.042)
0.48 (.019)
0.44 (.017)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
ASSEMBLY
LOT CODE
E401 9245
IRFI840G
EXAMPLE : THIS IS AN IRFI840G
WITH ASSEMBLY
LOT CODE E401
A
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
To Order
4/96
Next Data Sheet
Index
Previous Datasheet
相关PDF资料
PDF描述
IRLIZ34G POWER MOSFET
IRLIZ34N Power MOSFET
IRLIZ44G HEXFET POWER MOSFET
IRLL2703 HEXFET?? Power MOSFET
IRLL2705 HEXFET Power MOSFET
相关代理商/技术参数
参数描述
IRLIZ24NHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 14A 3-Pin(3+Tab) TO-220 Full-Pak
IRLIZ24NPBF 功能描述:MOSFET MOSFT 55V 14A 60mOhm 10nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLIZ34A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262AA
IRLIZ34G 功能描述:MOSFET N-Chan 60V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLIZ34G_09 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET