
IRLIZ44N
HEXFET Power MOSFET
PD - 9.1498A
S
D
G
VDSS = 55V
RDS(on) = 0.022
ID = 30A
l Logic-Level Gate Drive
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
TO-220 FULLPAK
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
8/25/97
Description
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.3
RθJA
Junction-to-Ambient
–––
65
Thermal Resistance
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
30
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
22
A
IDM
Pulsed Drain Current
160
PD @TC = 25°C
Power Dissipation
45
W
Linear Derating Factor
0.3
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
210
mJ
IAR
Avalanche Current
25
A
EAR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
°C/W