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参数资料
| 型号： | IRLIZ44N |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 105K |
| 代理商： | IRLIZ44N |
IRLIZ44N
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.070 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.022
VGS = 10V, ID = 17A
–––
––– 0.025
VGS = 5.0V, ID = 17A
–––
––– 0.035
VGS = 4.0V, ID = 14A
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
21
–––
S
VDS = 25V, ID = 25A
–––
25
A
VDS = 55V, VGS = 0V
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
48
ID = 25A
Qgs
Gate-to-Source Charge
–––
8.6
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
25
VGS = 5.0V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 28V
tr
Rise Time
–––
84
–––
ns
ID = 25A
td(off)
Turn-Off Delay Time
–––
26
–––
RG = 3.4, VGS = 5.0V
tf
Fall Time
–––
15
–––
RD = 1.1
, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
1700 –––
VGS = 0V
Coss
Output Capacitance
–––
400
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
150
–––
= 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
–––
12
–––
= 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
S
D
G
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
RDS(on)
Static Drain-to-Source On-Resistance
nH
pF
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 470H
RG = 25, IAS = 25A. (See Figure 12)
t=60s, =60Hz
ISD ≤ 25A, di/dt ≤ 270A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRLZ44N data and test conditions
Pulse width ≤ 300s; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.3
V
TJ = 25°C, IS = 17A, VGS = 0V
trr
Reverse Recovery Time
–––
80
120
ns
TJ = 25°C, IF = 25A
Qrr
Reverse RecoveryCharge
–––
210
320
C
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
30
160
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