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参数资料
| 型号： | IRLMS1503 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 180K |
| 代理商： | IRLMS1503 |
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
75
°C/W
Fifth Generation HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6
package with its customized leadframe
produces a HEXFET power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Description
3/17/04
l
Generation V Technology
l
Micro6 Package Style
l
Ultra Low
RDS(on)
l
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
3.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
2.6
A
IDM
Pulsed Drain Current
18
PD @TA = 25°C
Power Dissipation
1.7
W
Linear Derating Factor
13
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance Ratings
www.irf.com
1
Micro6
IRLMS1503
HEXFET Power MOSFET
PD - 91508D
VDSS = 30V
RDS(on) = 0.10
Top View
1
2
D
G
A
D
S
3
4
5
6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLMS1503_05 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRLMS1503PBF | 制造商:International Rectifier 功能描述:MOSFET N LOGIC MICRO-6 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, MICRO-6 |
| IRLMS1503TR | 功能描述:MOSFET N-CH 30V 3.2A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLMS1503TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 3.2A 6-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 3.2A 6TSOP - Tape and Reel |
| IRLMS1503TRPBF | 功能描述:MOSFET MOSFT 30V 3.2A 100mOhm 6.4nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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