- 您现在的位置：买卖IC网 > PDF目录176096 > IRLMS1503 (International Rectifier) Power MOSFET PDF资料下载
参数资料
| 型号： | IRLMS1503 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 180K |
| 代理商： | IRLMS1503 |
IRLMS1503
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
0.037
V/°C Reference to 25°C, ID = 1mA
0.100
VGS = 10V, ID = 2.2A
0.20
VGS = 4.5V, ID = 1.1A
VGS(th)
Gate Threshold Voltage
1.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
1.1
S
VDS = 10V, ID = 1.1A
1.0
VDS = 24V, VGS = 0V
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
-100
VGS = -20V
Gate-to-Source Reverse Leakage
100
VGS = 20V
Qg
Total Gate Charge
6.4
9.6
ID = 2.2A
Qgs
Gate-to-Source Charge
1.1
1.7
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
1.9
2.8
VGS = 10V, See Fig. 6 and 9
td(on)
Turn-On Delay Time
4.6
VDD = 15V
tr
Rise Time
4.4
ID = 2.2A
td(off)
Turn-Off Delay Time
10
RG = 6.0
tf
Fall Time
2.0
RD = 6.7, See Fig. 10
Ciss
Input Capacitance
210
VGS = 0V
Coss
Output Capacitance
90
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
32
= 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
A
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
1.2
V
TJ = 25°C, IS = 2.2A, VGS = 0V
trr
Reverse Recovery Time
36
54
ns
TJ = 25°C, IF = 2.2A
Qrr
Reverse RecoveryCharge
39
58
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
18
1.7
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.2A, di/dt ≤ 150A/s, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Pulse width ≤ 300s; duty cycle ≤ 2%.
S
D
G
Surface mounted on FR-4 board, t ≤ 5sec.
相关PDF资料 |
PDF描述 |
|---|---|
| IRLU110 | 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| IRLZ34-015PBF | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRM-3733N3 | LOGIC OUTPUT PHOTO DETECTOR |
| IRM-8752-5 | LOGIC OUTPUT PHOTO DETECTOR |
| IRM-8755-1 | LOGIC OUTPUT PHOTO DETECTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLMS1503_05 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRLMS1503PBF | 制造商:International Rectifier 功能描述:MOSFET N LOGIC MICRO-6 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, MICRO-6 |
| IRLMS1503TR | 功能描述:MOSFET N-CH 30V 3.2A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLMS1503TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 3.2A 6-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 3.2A 6TSOP - Tape and Reel |
| IRLMS1503TRPBF | 功能描述:MOSFET MOSFT 30V 3.2A 100mOhm 6.4nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。