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参数资料
| 型号： | IRLP2505 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS场效应管) |
| 中文描述： | HEXFET功率MOSFET（马鞍山的HEXFET功率场效应管） |
| 文件页数： | 1/8页 |
| 文件大小： | 148K |
| 代理商： | IRLP2505 |
HEXFET
Power MOSFET
IRLP2505
PD - _____
V
DSS
= 55V
R
DS(on)
= 0.008
I
D
= 90A
8/4/95
Parameter
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
1.0
––––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
PRELIMINARY
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
Parameter
Max.
90
64
360
150
1.0
±20
500
54
15
2.9
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
相关PDF资料 |
PDF描述 |
|---|---|
| IRLP3803 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 120A I(D) | TO-247AC |
| IRLR010 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) | TO-252 |
| IRLR014A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.2A I(D) | TO-252AA |
| IRLR020 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | TO-252 |
| IRLR024A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLP3034PBF | 功能描述:MOSFET MOSFT 40V 327A 1.7mOhm 108nC TO221 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLP3803 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 120A I(D) | TO-247AC |
| IRLR 3110ZPBF | 制造商:International Rectifier 功能描述:Bulk |
| IRLR 3636PBF | 制造商:International Rectifier 功能描述:Bulk |
| IRLR/U120A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
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