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参数资料
| 型号： | IRLP2505 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS场效应管) |
| 中文描述： | HEXFET功率MOSFET（马鞍山的HEXFET功率场效应管） |
| 文件页数： | 2/8页 |
| 文件大小： | 148K |
| 代理商： | IRLP2505 |
IRLP2505
Parameter
Min. Typ. Max. Units
55
–––
–––
0.035 –––
–––
––– 0.008
–––
––– 0.010
–––
––– 0.013
1.0
–––
59
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
160
–––
43
–––
84
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 54A
V
GS
= 5.0V, I
D
= 54A
V
GS
= 4.0V, I
D
= 45A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 54A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 54A
V
DS
= 44V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 54A
R
G
= 1.3
,
V
GS
= 5.0V
R
D
= 0.50
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
130
25
67
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
5000
1100
390
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
–––
13
–––
L
D
Internal Drain Inductance
–––
5.0
–––
μA
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 54A, V
GS
= 0V
T
J
= 25°C, I
F
= 54A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
140
650
1.3
210
970
V
ns
nC
Source-Drain Ratings and Characteristics
A
–––
–––
360
–––
–––
90
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 240μH
R
G
= 25
, I
AS
= 54A. (See Figure 12)
I
SD
≤
54A, di/dt
≤
130A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
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