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| 型号： | IRLR110TR |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 4.3A DPAK |
| 标准包装： | 2,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 540 毫欧 @ 2.6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.1nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
100
Definition
R DS(on) ( Ω )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
DPAK
IPAK
V GS = 5.0 V
6.1
2.0
3.3
Single
D
0.54
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Surface Mount (IRLR110, SiHLR110)
? Straight Lead (IRLU110, SiHLU110)
? Available in Tape and Reel
? Logic-Level Gate Drive
? R DS(on) Specified at V GS = 4 V and 5 V
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
(TO-252)
D
D
(TO-251)
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
S
G
D S
S
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
N-Channel MOSFET
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
DPAK (TO-252)
SiHLR110-GE3
IRLR110PbF
SiHLR110-E3
IRLR110
SiHLR110
DPAK (TO-252)
SiHLR110TR-GE3
IRLR110TRPbF a
SiHLR110T-E3 a
IRLR110TR a
SiHLR110T a
DPAK (TO-252)
SiHLR110TRL-GE3
IRLR110TRLPbF
SiHLR110TL-E3
IRLR110TRL a
SiHLR110TL a
IPAK (TO-251)
SiHLU110-GE3
IRLU110PbF
SiHLU110-E3
IRLU110
SiHLU110
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
100
± 10
UNIT
V
Continuous Drain Current
V GS at 5.0 V
T C = 25 °C
T C = 100 °C
I D
4.3
2.7
A
Pulsed Drain Current a
I DM
17
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
0.20
0.020
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
100
4.3
2.5
mJ
A
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
25
2.5
5.5
- 55 to + 150
260 d
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 25 V, starting T J = 25 °C, L = 8.1 mH, R g = 25 Ω , I AS = 4.3 A (see fig. 12).
c. I SD ≤ 5.6 A, dI/dt ≤ 140 A/μs, V DD ≤ V DS , T J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91323
S10-1139-Rev. C, 17-May-10
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLR110TRL | 功能描述:MOSFET N-Chan 100V 4.3 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLR110TRLPBF | 功能描述:MOSFET N-Chan 100V 4.3 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLR110TRPBF | 功能描述:MOSFET N-Chan 100V 4.3 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLR110TRR | 功能描述:MOSFET N-CH 100V 4.3A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLR111 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4A I(D) | TO-252 |
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