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| 型号： | IRLR8503TRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 44A DPAK |
| 产品目录绘图： | IR Hexfet DPak |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1650pF @ 25V |
| 功率 - 最大： | 62W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | IRLR8503PBFDKR |
IRLR8503PbF
Power MOSFET Optimization for DC-DC Converters
While the IRLR8103V and IRLR8503 can and are be-
Table 2 – New Charge Parameters
ing used in a variety of applications, they were designed
and optimized for low voltage DC-DC conversion in a
synchronous buck converter topology, specifically, mi-
croprocessor power applications. The IRLR8503 (Fig-
ure 1) was optimized for the control FET socket, while
the IRLR8103V was optimized for the synchronous
FET function.
New Charge
Parameter
Q GS1
Q GS2
Q GCONT
Q SWITCH
Q OSS
Description
Pre-Threshold Gate Charge
Post-Threshold Gate Charge
Control FET Total Q G
Charge during control FET switching
Combines Q GS2 and Q GD
Output charge
Charge supplied to C OSS during the Q GD
period of control FET switching
Waveform
Figure 3
Figure 5
Figure 6
I RLR8503
(Cont FET)
CGD
Q GSYNC
Synchronous FET Total Q G (V DS ≤ 0) Figure 4
Drain Voltage
Drain Voltage
IRLR8103V
(Sync FET)
CGS
CDS
VGTH
QG
(Control FET)
QSwitch
QGD
Gate Voltage
Dead
0V Time
Gate Voltage
VGTH
Figure 1 – Application
Figure 2 – Inter-electrode
QG (Sync FET)
0A
Drain Current
Topology Capacitance
Because of the inter-electrode capacitance (Figure 2)
of the Power MOSFET, specifying the R DSON of the de-
vice is not enough to ensure good performance. An
Drain Current
Figure 3 – Control FET
Waveform
Body
Diode
Current
Figure 4 – Sync FET
Waveform
optimization between R DSON and charge must be per-
formed to insure the best performing MOSFET for a
given application. Both die size and device architec-
The waveforms are broken into segments correspond-
ing to charge parameters. These, in turn, correspond
to discrete time segments of the switching waveform.
ture must be varied to achieve the minimum possible
in-circuit losses. This is independently true for both
control FET and synchronous FET. Unfortunately, the
capacitances of a FET are non-linear and voltage de-
pendent. Therefore, it is inconvenient to specify and
use them effectively in switching power supply power
loss estimations. This was well understood years ago
and resulted in changing the emphasis from capaci-
tance to gate charge on Power MOSFET data sheets.
g1
g2
VIN
N1
Cont FET
N2
Sync FET
Coss1
2n
SN
Coss2
2n
Switch node voltage
(VSN)
N1 Gate
Voltage
N1 Current
N1 Coss Discharge
+
N2 Coss Charge
Table 1 – Traditional Charge Parameters
Device Capacitance Corresponding Charge Parameter
Figure 5 – Q OSS
Equivalent Circuit
Figure 6 – Q OSS
Waveforms
C GS
C GS + C GD
C GD
Q GS
Q G
Q GD
Losses may be broken into four categories: conduc-
tion loss, gate drive loss, switching loss, and output
loss. The following simplified power loss equation is
International Rectifier has recently taken the industry
a step further by specifying new charge parameters
that are even more specific to DC-DC converter de-
sign (Table 2). In order to understand these parameters,
it is best to start with the in-circuit waveforms in Fig-
ure 3 & Figure 4.
www.irf.com
true for both MOSFETs in a synchronous buck con-
verter:
P LOSS = P CONDUCTION + P GATE DRIVE + P SWITCH + P OUTPUT
For the synchronous FET, the P SWITCH term becomes
virtually zero and is ignored.
3
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相关代理商/技术参数 |
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|---|---|
| IRLR8503TRR | 功能描述:MOSFET N-CH 30V 44A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLR8503TRRPBF | 功能描述:MOSFET N-CH 30V 44A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLR8711CPBF | 制造商:International Rectifier 功能描述:MOSFET N D-PAK 制造商:International Rectifier 功能描述:Single N-Channel 25 V 68 W 13 nC Hexfet Power Mosfet Surface Mount - TO-252AA |
| IRLR8713PBF | 制造商:International Rectifier 功能描述:MOSFET N 25V D-PAK 制造商:International Rectifier 功能描述:MOSFET N-Channel 25V 100A DPAK |
| IRLR8715CPBF | 功能描述:MOSFET N-CH 25V 51A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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