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| 型号： | IRLR8503TRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 4/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 44A DPAK |
| 产品目录绘图： | IR Hexfet DPak |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1650pF @ 25V |
| 功率 - 最大： | 62W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | IRLR8503PBFDKR |
IRLR8503PbF
Table 3 and Table 4 describes the event during the various charge segments and shows an approximation of losses during that
period.
Table 3 – Control FET Losses
P COND = I RMS × R DS ( on )
Description
Conduction Losses associated with MOSFET on time. I RMS is a function of load
Loss current and duty cycle.
Segment Losses
2
P QGS 2 ≈ V IN × I L ×
Q GS 2
P QGD ≈ V IN × I L ×
Q GD
Gate Drive
Loss
Switching
Loss
Losses associated with charging and discharging the gate of the
MOSFET every cycle. Use the control FET Q G .
Losses during the drain voltage and drain current transitions for every full cycle.
Losses occur during the Q GS2 and Q GD time period and can be simplified by using
Q switch .
P IN = V G × Q G × ?
I G
I G
× ?
× ?
P SWITCH ≈ V IN × I L
Q SW
I G
× ?
Output
Loss
Losses associated with the Q OSS of the device every cycle when the control
FET turns on. Losses are caused by both FETs, but are dissipated by the control P OUTPUT =
FET.
Q OSS
2
× V IN × F
Table 4 – Synchronous FET Losses
P COND = I RMS × R DSon
Description
Conduction Losses associated with MOSFET on time. I RMS is a function of load current and
Loss duty cycle.
Gate Drive Losses associated with charging and discharging the gate of the MOSFET every
Loss cycle. Use the Sync FET Q G .
Segment Losses
2
P IN = V G × Q G × ?
Switching
Loss
Generally small enough to ignore except at light loads when the current reverses
in the output inductor. Under these conditions various light load power saving
techniques are employed by the control IC to maintain switching losses to a
negligible level.
P SWITCH ≈ 0
turns on. They are caused by the synchronous FET, but are dissipated in the control P OUTPUT =
Output
Loss
Losses associated with the Q OSS of the device every cycle when the control FET
FET.
Q OSS
2
× V IN × ?
Typical PC Application
The IRLR8103V and the IRLR8503 are suitable for
Synchronous Buck DC-DC Converters, and are optimized
for use in next generation CPU applications. The
IRLR8103V is primarily optimized for use as the low side
synchronous FET (Q2) with low R DS(on) and high CdV/dt
immunity.The IRLR8503 is primarily optimized for use as
the high side control FET (Q2) with low cobmined Qsw and
R DS(on) , but can also be used as a synchronous FET. The
IRLR8503 is also tested for Cdv/dt immunity, critical for
the low side socket. The typical configuration in which
these devices may be used in shown in Figure 7.
4
IRLR8503
Control FET (Q1)
1 x IRLR8103 V or
or 2 x IRLR8503
Synchronous
FET (Q2)
Figure 7 . 2 & 3-FET solution for
Synchronous Buck Topology.
www.irf.com
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| IRLR8503TRR | 功能描述:MOSFET N-CH 30V 44A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLR8503TRRPBF | 功能描述:MOSFET N-CH 30V 44A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLR8711CPBF | 制造商:International Rectifier 功能描述:MOSFET N D-PAK 制造商:International Rectifier 功能描述:Single N-Channel 25 V 68 W 13 nC Hexfet Power Mosfet Surface Mount - TO-252AA |
| IRLR8713PBF | 制造商:International Rectifier 功能描述:MOSFET N 25V D-PAK 制造商:International Rectifier 功能描述:MOSFET N-Channel 25V 100A DPAK |
| IRLR8715CPBF | 功能描述:MOSFET N-CH 25V 51A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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