- 您现在的位置：买卖IC网 > PDF目录296249 > IRLU024NPBF (International Rectifier) HEXFET Power MOSFET PDF资料下载
参数资料
| 型号： | IRLU024NPBF |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 304K |
| 代理商： | IRLU024NPBF |
HEXFET Power MOSFET
S
D
G
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.3
RθJA
Case-to-Ambient (PCB mount)**
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
VDSS = 55V
RDS(on) = 0.065
ID = 17A
Description
12/6/04
www.irf.com
1
l Logic-Level Gate Drive
l Surface Mount (IRLR024N)
l Straight Lead (IRLU024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Fifth Generation HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
12
A
IDM
Pulsed Drain Current
72
PD @TC = 25°C
Power Dissipation
45
W
Linear Derating Factor
0.3
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
68
mJ
IAR
Avalanche Current
11
A
EAR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD- 95081A
IRLR024NPbF
IRLU024NPbF
D-Pak
I-Pak
IRLR024NPbF IRLU024NPbF
相关PDF资料 |
PDF描述 |
|---|---|
| IRLU4343PBF | 26 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| IRU1117CS | 800mA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR |
| IS28F002BVT-80TI | 256K X 8 FLASH 5V PROM, 110 ns, PDSO40 |
| IS28F020-12PLI | 256K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| IS41LV44004-50JI | 4M X 4 EDO DRAM, 50 ns, PDSO24 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLU024PBF | 功能描述:MOSFET N-Chan 60V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLU024Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRLU024ZHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 16A 3PIN IPAK - Rail/Tube |
| IRLU024ZPBF | 功能描述:MOSFET MOSFT 55V 16A 58mOhm 6.6nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLU034A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 23A I(D) | TO-251AA |
发布紧急采购，3分钟左右您将得到回复。