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参数资料
| 型号： | IRLU2905 |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 42A I-PAK |
| 标准包装： | 75 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 42A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 27 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 48nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 25V |
| 功率 - 最大： | 110W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 长引线，IPak，TO-251AB |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | *IRLU2905 Q853121 |
PD- 91334E
IRLR/U2905
HEXFET ? Power MOSFET
l
l
l
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2905)
D
V DSS = 55V
l
l
l
l
Straight Lead (IRLU2905)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
G
S
R DS(on) = 0.027 ?
I D = 42A ?
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
D -P ak
T O -252 A A
I-P ak
T O -25 1A A
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
42 ?
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
30
160
110
0.71
± 16
210
25
11
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.4
R θ JA
R θ JA
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
50
110
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
12/8/00
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLU2905HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 42A 3-Pin(3+Tab) IPAK |
| IRLU2905PBF | 制造商:International Rectifier 功能描述:MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;I-Pak (TO-251AA);PD 110W 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 42A 3-Pin(3+Tab) IPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 42A 3PIN IPAK - Rail/Tube 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 42A 3-Pin(3+Tab) IPAK Bulk 制造商:International Rectifier 功能描述:MOSFET N 55V 36A I-PAK |
| IRLU2905Z | 功能描述:MOSFET N-CH 55V 42A I-PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLU2905ZPBF | 功能描述:MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLU2908 | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
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