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参数资料
| 型号： | IRLU3103 |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 55A I-PAK |
| 标准包装： | 75 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 19 毫欧 @ 33A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1600pF @ 25V |
| 功率 - 最大： | 107W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 长引线，IPak，TO-251AB |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | *IRLU3103 Q832191 |
PD - 91333E
IRLR/U3103
HEXFET ? Power MOSFET
l
l
l
l
l
l
l
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3103)
Straight Lead (IRLU3103)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
G
D
S
V DSS = 30V
R DS(on) = 0.019 ?
I D = 55A ?
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter
D -P A K
T O -2 52 A A
Max.
I-P A K
T O -25 1 A A
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
55 ?
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Energy ??
Peak Diode Recovery dv/dt ?
39 ?
220
107
0.71
± 16
240
34
11
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.4
R θ JA
R θ JA
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
–––
–––
50
110
°C/W
www.irf.com
1
11/11/98
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