- 您现在的位置：买卖IC网 > PDF目录360971 > IRLZ34 (NXP Semiconductors N.V.) N-channel enhancement mode Logic level TrenchMOS transistor PDF资料下载
参数资料
| 型号： | IRLZ34 |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel enhancement mode Logic level TrenchMOS transistor |
| 中文描述： | N沟道增强型晶体管逻辑电平TrenchMOS |
| 文件页数： | 7/7页 |
| 文件大小： | 62K |
| 代理商： | IRLZ34 |
Philips Semiconductors
Product specification
N-channel enhancement mode
Logic level TrenchMOS
TM
transistor
IRLZ34N
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
7
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| IRLZ34N | N-channel enhancement mode Logic level TrenchMOS transistor |
| IRLZ34NL | HEXFET Power MOSFET |
| IRLZ34 | HEXFET POWER MOSFET |
| IRLZ34NS | HEXFET Power MOSFET |
| IRM3000 | Optoelectronic |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLZ34_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRLZ34A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB |
| IRLZ34L | 功能描述:MOSFET N-CH 60V 30A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLZ34LPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRLZ34N | 制造商:International Rectifier 功能描述:MOSFET N LOGIC TO-220 |
发布紧急采购，3分钟左右您将得到回复。