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参数资料
| 型号： | IRLZ34NS |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 30A D2PAK |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 880pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IRLZ34NS |
PD - 91308A
IRLZ34NS/L
l
Logic-Level Gate Drive
HEXFET ? Power MOSFET
l
l
Advanced Process Technology
Surface Mount (IRLZ34NS)
D
V DSS = 55V
l
l
l
Low-profile through-hole (IRLZ34NL)
175°C Operating Temperature
Fast Switching
G
R DS(on) = 0.035 ?
D P ak
l FullyAvalancheRated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
2
S
Max.
I D = 30A
T O -26 2
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V ?
30
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
21
110
3.8
68
0.45
±16
110
16
6.8
5.0
A
W
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
2.2
40
°C/W
5/12/98
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLZ34NSL | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET?? Power MOSFET |
| IRLZ34NSPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ34NSPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
| IRLZ34NSTRL | 制造商:International Rectifier 功能描述: |
| IRLZ34NSTRLPBF | 功能描述:MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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