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| 型号： | IRMD22381Q |
| 厂商： | International Rectifier |
| 文件页数： | 23/30页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO IR22381Q MOTOR DRIVER |
| 标准包装： | 1 |
| 主要目的： | 电源管理，电机控制 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | IR22381Q / IR22381Q |
| 主要属性： | 3 相，ACIM / BLAC，25 A 时为 380 V，带制动器，具有 1200V DC 总线功能 |
| 次要属性： | 与 ECONO2-PIM IGBT 模块兼容 |
| 已供物品： | 板 |
| 相关产品： | IR22381QPBF-ND - IC IGBT DRIVER 3PHASE 64-MQFP |
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IR22381Q PBF /IR21381Q ( P b F )
Now we must consider the influencing factors
2
Sizing tips
contributing V BS to decrease:
2.1 Bootstrap supply
The V BS1,2,3 voltage provides the supply to the high
side drivers circuitry of the IR22381/IR21381. V BS
supply sit on top of the V S voltage and so it must be
floating.
The bootstrap method to generate V BS supply can
be used with IR22381/IR21381 high side drivers.
The bootstrap supply is formed by a diode and a
capacitor connected as in Figure 23.
Figure 23: bootstrap supply schematic
? IGBT turn on required Gate charge ( Q G );
? IGBT gate-source leakage current ( I LK_GE );
? Floating section quiescent current ( I QBS );
? Floating section leakage current ( I LK )
? Bootstrap diode leakage current ( I LK_DIODE );
? Desat diode bias when on ( I DS- )
? Charge required by the internal level shifters
( Q LS ); typical 20nC
? Bootstrap capacitor leakage current ( I LK_CAP );
? High side on time ( T HON ).
I LK_CAP is only relevant when using an electrolytic
capacitor and can be ignored if other types of
capacitors are used. It is strongly recommend using
at least one low ESR ceramic capacitor (paralleling
electrolytic and low ESR ceramic may result in an
efficient solution).
Then we have:
Q TOT = Q G + Q LS + ( I LK _ GE + I QBS +
+ I LK + I LK _ DIODE + I LK _ CAP + I DS ? ) ? T HON
The minimum size of bootstrap capacitor is:
This method has the advantage of being simple and
low cost but may force some limitations on duty-
cycle and on-time since they are limited by the
C BOOT min =
Q TOT
? V BS
requirement to refresh the charge in the bootstrap
capacitor.
Proper capacitor choice can reduce drastically
these limitations.
An example follows:
using a 15A @ 100°C IGBT (GB15XP120K):
Bootstrap capacitor sizing
To size the bootstrap capacitor, the first step is to
establish the minimum voltage drop ( ? V BS ) that we
have to guarantee when the high side IGBT is on.
If V GEmin is the minimum gate emitter voltage we
want to maintain, the voltage drop must be:
?
?
?
?
?
?
?
?
?
I QBS = 250 μA
I LK = 50 μA
Q LS = 20 nC;
Q G = 58 nC
I LK_GE = 250 nA
I LK_DIODE = 100 μA
I LK_CAP = 0
I DS- = 150 μA
T HON = 100 μs.
(See Static Electrical Charact.);
(See Static Electrical Charact.);
(Q ge +Q gc Datasheet GB15XP120K);
(Datasheet GB15XP120K);
(with reverse recovery time <100 ns);
(neglected for ceramic capacitor);
(see Static Electrical Charact.);
? V BS ≤ V CC ? V F ? V GE min ? V CEon
And:
under the condition:
V GE min > V BSUV ?
?
?
?
?
V CC = 18 V
V F = 1 V
V CEonmax = 2.5 V
V GEmin = 11.9 V
where V CC is the IC voltage supply, V F is bootstrap
diode forward voltage, V CEon is emitter-collector
voltage of low side IGBT and V BSUV- is the high-side
supply undervoltage negative going threshold.
23
the maximum voltage drop ? V BS becomes
? V BS ≤ V CC ? V F ? V GE min ? V CEon =
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