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参数资料
| 型号： | IRMD22381Q |
| 厂商： | International Rectifier |
| 文件页数： | 25/30页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO IR22381Q MOTOR DRIVER |
| 标准包装： | 1 |
| 主要目的： | 电源管理，电机控制 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | IR22381Q / IR22381Q |
| 主要属性： | 3 相，ACIM / BLAC，25 A 时为 380 V，带制动器，具有 1200V DC 总线功能 |
| 次要属性： | 与 ECONO2-PIM IGBT 模块兼容 |
| 已供物品： | 板 |
| 相关产品： | IR22381QPBF-ND - IC IGBT DRIVER 3PHASE 64-MQFP |
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IR22381Q PBF /IR21381Q ( P b F )
C RES
V GE
I C
R Gon = gate on-resistor
R DRp = driver equivalent on-resistance
IR22381Q/IR21381Q HOP/LOP and HOQ/LOQ
pins can be used to configure gate charge circuit.
t 1 ,Q GE
V CE
90%
t 2 ,Q GC
dV/dt
C RES
I C
C RESon
Fast turn on can be configured using HOP and LOP
pins (up to t ON1 switching time).
For slower turn on times HOQ and LOQ can be
used.
Current partitioning can be changed acting on the
output resistors.
V ge *
10%
10%
V GE
C RESoff
In particular, shorting HOP to HOQ and LOP to
LOQ, R DRp is defined by
? t on 1 ? Vcc
? I
? t
? ?
? 1 ? ? ? ? when t SW > t on 1
t Don
t SW
t R
Figure 24: Nomenclature
t,Q
R DRp
?
= ? SW ? o 1 +
?
? ?
+
Vcc ? t SW
I o 2 + ? t on 1
Vcc
I o 1 +
? ?
? ?
when t SW ≤ t on 1
2.2.1
Sizing the turn-on gate resistor
(I O1+ ,I O2+ and
Characteristics”).
t on1
from
“static
Electrical
Q gc + Q ge
dV out I avg
- Switching-time
For the matters of the calculation included
hereafter, the switching time t sw is defined as the
time spent to reach the end of the plateau voltage
(a total Q gc + Q ge has been provided to the IGBT
gate). To obtain the desired switching time the gate
resistance can be sized starting from Q ge and Q gc ,
Vcc , V ge* (see Figure 25):
I avg =
t sw
and
Table 1 reports the gate resistance size for two
commonly used IGBTs (calculation made using
typical datasheet values and assuming Vcc=15V).
- Output voltage slope
Turn-on gate resistor R Gon can be sized to control
output slope (dV OUT /dt) .
While the output voltage has a non-linear
behaviour, the maximum output slope can be
approximated by:
=
dt C RESoff
R TOT =
Vcc ? V ge *
I avg
inserting the
rearranging:
expression
yielding
I avg
and
Vcc ? V ge
C RESoff ?
Vcc/Vb
I avg
C RES
R TOT =
*
dV out
dt
R DRp
As an example, Table 2 shows the sizing of gate
R Gon
COM/Vs
Figure 25: R Gon sizing
where R TOT = R DRp + R Gon
25
resistance to get dV out /dt=5V/ns when using two
popular IGBTs, typical datasheet values and
assuming Vcc=15V .
NOTICE : Turn on time must be lower than T BL to
avoid improper desaturation detection and SSD
triggering.
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